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M600GA124.XLS-14
20 V 18 16 14 800V 12 10 8 6 4 VGE 2 0 0 QGate 1000 2000 3000 nC 600
ICpuls = 400 A
100 nF Cies
VGE = 0 V f = 1 MHz
10 Coes
C
Cres 1
4000
0
VCE
10
20
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Fig. 13 Typ. gate charge characteristic
M600GA124.XLS-15
Fig. 14 Typ. capacitances vs.VCE
M600GA124.XLS-16
10000 ns
1000
tdoff
Tj = 125 C VCE = 600 V VGE = 15 V RGon = 4 RGoff = 4 induct. load
10000
ns
tdoff
1000 tdon
Tj = 125 C VCE = 600 V VGE = 15 V IC = 400 A induct. load
100
tr tdon tf
tr 100 tf
t 10 0 IC 200 400 600 800 A 1000
t 10 2 RG 4 6 8 10 12
Fig. 15 Typ. switching times vs. IC
M600GA124.XLS-17
Fig. 16 Typ. switching times vs. gate resistor RG
M600GA124.XLS-18
800 A 600 Tj=125C, typ. Tj=25C, typ. Tj=125C, max. Tj=25C, max.
40 mJ 35 30 25 20 15
R G= 4 5
VCC = 600 V Tj = 125 C VGE = 15 V
400
10
200 IF 0 0 VF 1 2 V 3
10 5 0 0 IF 200 400 600 800 A 1000
EoffD
Fig. 17 Typ. CAL diode forward characteristic
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Fig. 18 Diode turn-off energy dissipation per pulse
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0,1 K/W 0,01
M600GA124.XLS-19
0,1 K/W
M600GA124.XLS-20
0,01 D=0,5 0,2 0,1 0,05 0,02 0,01
0,001
0,0001 single pulse ZthJC 0,00001 0,00001 0,0001 tp
D=0,50 0,20 0,10 0,05 0,02 0,01
0,001
ZthJC 0,0001 0,00001
single pulse
0,001
0,01
0,1 s
1
tp
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0,001
0,01
0,1 s
1
Fig. 19 Transient thermal impedance of IGBT ZthJC = f (tp); D = tp / tc = tp * f
500 A 400 4 5 300 10 200
M600GA124.XLS-22
Fig. 20 Transient thermal impedance of inverse CAL diodes ZthJC = f (tp); D = tp / tc = tp * f 9&& 9 7M & 9*( 9
600 A 500 RG 4 400 5
M600GA124.XLS-23
RG
9&& 9 7M & 9*( 9 ,) $
300
10
200 100 IRR 0 0 IF 200 400 600 800 A 1000
100 IRR 0 0 diF/dt 2000 4000 6000 8000 A/s
Fig. 22 Typ. CAL diode peak reverse recovery current IRR = f (IF; RG)
120 C 100 10 400 A 60 300 A 200 A 40 100 A 20 Qrr 0 0 1000 diF/dt 2000 3000 4000 5000 6000 A/s
M600GA124.XLS-24
Fig. 23 Typ. CAL diode peak reverse recovery current IRR = f (diF/dt; RG)
R G= 5 4
IF= 800 A
9&& 9 7M & 9*( 9
80
Fig. 24 Typ. CAL diode recovered charge QRR = f (diF/dt; IF; RG (c) by SEMIKRON 010502 B 6 - 35
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